Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

R. Haight, A. Barkhouse, O. Gunawan, B. Shin, M. Copel, M. Hopstaken, D.B. Mitzi

Applied Physics Letters 98, 253502 (2011) (Before KAIST)

Electron mobility in surface-and buried-channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric

S.J. Bently, M. Holland, X. Li, G.W. Paterson, H. Zhou, O. Ignatova, D. Macintyre, S. Thoms, A. Asenov, B. Shin, J. Ahn, P.C. Mclntyre, I. G. Thayne

IEEE Electron Device Letters 32, 494 (2011) (Before KAIST)

III-V nMOSFETs – some issues associated with roadmap worthiness

I. Thayne, S. Bentley, M. Holland, W. Jansen, X. Li, D. Macintyre, S. Thoms, B. Shin, J. Ahn, P.C. Mclntyre

Microelectronic Engineering 88, 1070 (2011) (Before KAIST)

A distributed model for border traps in Al2O3 – InGaAs MOS devices

Y. Yuan, L.Q. Wang, B. Yu, B. Shin, J. Ahn, P.C. Mclntyre, P.M. Asbeck, M.J.W. Rodwell, and Y. Taur

IEEE Electron Device Letters 32, 485 (2011) (Before KAIST)

Charged defect quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS capacitors

R.D. Long, B. Shin, S. Monaghan, K. Cherkaoui, J. Cagnon, S. Stemmer, P.C. Mclntyre, P. K. Hurley

Journal of The Electrochemical Society 158, G103 (2011) (Before KAIST)

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

K. Wang, B. Shin, K.B. Reuter, T. Todorov, D.B. Mitzi, S. Guha

Applied Physics Letters 98, 051912 (2011) (Before KAIST)

Thermally evaporated Cu2ZnSnS4 solar cells

K. Wang, O. Gunawan, T. Todorov, B. Shin, S.J. Chey, N.A. Bojarczuk, D.B. Mitzi, S. Guha

Applied Physics Letters 97, 143508 (2010) (Before KAIST)

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

B. Shin, J.B. Clemens, M.A. Kelly, A.C. Kummel, P.C. Mclntyre

Applied Physics Letters 96, 252907 (2010) (Before KAIST)

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

B. Shin, J.R. Weber, R.D. Long, P.K. Hurley, C.G. Van de Walle, P.C. Mclntyre

Applied Physics Letters 96, 152908 (2010) (Before KAIST)

Fabrication and sub-bandgap absorption of single crystal Si supersaturated with Se by pulsed laser mixing

M. Tabbal, T. Kim, D.N. Woolf, B. Shin, M.J. Aziz

Applied Physics A 98, 589 (2010) (Before KAIST)

Unpinned interface between AL2O3 gate dielectric layer grown by atomic layer deposition and chemically treated n-In0.53Ga0.47As(001)

B. Shin, J. Cagnon, R.D. Long, P.K. Hurley, S.S. Stemmer, P.C. Mclntyre

Electrochemical Solid-State Letters 12, G40 (2009) (Before KAIST)

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

U. Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, B.J. Thibeault, A.C. Gossard, M.J.W. Rodwell, B. Shin, E. Kim, P.C. Mclntyre, B. Yu, Y. Yuan

IEEE Electron Device Letters 30, 1128 (2009) (Before KAIST)

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

B. Shin, D. Choi, J.S. Harris, P.C. Mnlntyre

Applied Physics Letters 93, 052911 (2008) (Before KAIST)

Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy

B. Shin, M.J. Aziz

Physical Review B 76, 165408 (2007) (Before KAIST)

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

B. Shin, M.J. Aziz

Physical Review B 76, 085431 (2007) (Before KAIST)