Publications

Energy Materials Laboratory

Publications

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design
Authors
H. Park, W. Jung, D. Kang, J. Jeon, G. Yoo, Y. Park, J. Lee, Y. Jang, J. Lee, S. Park, H. Yu, B. Shin, S. Lee, J. Park
Journal
Advanced Materials
Vol
28
Page
864
Year
2016

The effects of graphene n-doping on a metal–graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene–perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W−1 in photoresponsivity and 3.3 × 104 → 5.4 × 104 Jones in detectivity).