Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design
- Journal
- Advanced Materials
- Page
- 864
- Year
- 2016
- Link
- https://doi.org/10.1002/adma.201503715 418회 연결
The effects of graphene n-doping on a metal–graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene–perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W−1 in photoresponsivity and 3.3 × 104 → 5.4 × 104 Jones in detectivity).