Relationship between Cu2ZnSnS4 quasi donor-acceptor pair density and solar cell efficiency

T. Gershon, B. Shin, N. Bojarczuk, T. Gokmen, S. Lu, S. Guha

Applied Physics Letters 103, 193903 (2013) (Before KAIST)

Photoluminescence characterization of a high-efficiency Cu2ZnSnS4 device

T. Gershon, B. Shin, N. Bojarczuk, T. Gokmen, S. Lu, S. Guha

Journal of Applied Physics 114, 154905 (2013) (Before KAIST)

On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact

B. Shin, N.A. Bojarczuk, S. Guha

Applied Physics Letters 102, 091907 (2013) (Before KAIST)

Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber

B. Shin, Y. Zhu, O. Gunawan, N.A. Bojarczuk, S.J. Chey, S. Guha

Progress in Photovoltaics: Research and Applications 21, 72 (2013) (Before KAIST)

In situ As2 decapping and atomic layer deposition of Al2O3 on n-InGaAs (100)

J. Ahn, B. Shin, P. C. McIntyre

ECS Transactions 45, 4 (2012) (Before KAIST)

Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

B. Shin, Y. Zhu, N.A. Bojarczuk, S.J. Chey, S. Guha

Applied Physics Letters 101, 053903 (2012) (Before KAIST)

Three-dimensional a-Si:H solar cells on glass nanocone arrays patterned by self-assembled Sn nanospheres

J. Kim, A.J. Hong, J.-W. Nah, B. Shin, F.M. Ross, D.K. Sadana

ACS Nano 6, 265 (2012) (Before KAIST)

“Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods”

O. Gunawan, T. Gokmen, C.W. Warren, J.D. Cohen, T.K. Todorov, D.A.R. Barkhouse, S. Bag, J. Tang, B. Shin, D.B. Mitzi

Applied Physics Letters 100, 253905 (2012) (Before KAIST)

Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

R. Haight, A. Barkhouse, O. Gunawan, B. Shin, M. Copel, M. Hopstaken, D.B. Mitzi

Applied Physics Letters 98, 253502 (2011) (Before KAIST)

Electron mobility in surface-and buried-channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric

S.J. Bently, M. Holland, X. Li, G.W. Paterson, H. Zhou, O. Ignatova, D. Macintyre, S. Thoms, A. Asenov, B. Shin, J. Ahn, P.C. Mclntyre, I. G. Thayne

IEEE Electron Device Letters 32, 494 (2011) (Before KAIST)

III-V nMOSFETs – some issues associated with roadmap worthiness

I. Thayne, S. Bentley, M. Holland, W. Jansen, X. Li, D. Macintyre, S. Thoms, B. Shin, J. Ahn, P.C. Mclntyre

Microelectronic Engineering 88, 1070 (2011) (Before KAIST)

A distributed model for border traps in Al2O3 – InGaAs MOS devices

Y. Yuan, L.Q. Wang, B. Yu, B. Shin, J. Ahn, P.C. Mclntyre, P.M. Asbeck, M.J.W. Rodwell, and Y. Taur

IEEE Electron Device Letters 32, 485 (2011) (Before KAIST)

Charged defect quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS capacitors

R.D. Long, B. Shin, S. Monaghan, K. Cherkaoui, J. Cagnon, S. Stemmer, P.C. Mclntyre, P. K. Hurley

Journal of The Electrochemical Society 158, G103 (2011) (Before KAIST)

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

K. Wang, B. Shin, K.B. Reuter, T. Todorov, D.B. Mitzi, S. Guha

Applied Physics Letters 98, 051912 (2011) (Before KAIST)

Thermally evaporated Cu2ZnSnS4 solar cells

K. Wang, O. Gunawan, T. Todorov, B. Shin, S.J. Chey, N.A. Bojarczuk, D.B. Mitzi, S. Guha

Applied Physics Letters 97, 143508 (2010) (Before KAIST)