We examined the 4 K photoluminescence spectra of over a dozen Cu2ZnSnS4 films and eight devices. We show that samples deficient in zinc show on average a higher quasi donor-acceptor pair (QDAP) density. However, the QDAP density in samples with the same metal composition also varies widely. Devices prepared with similar metal compositions show different open-circuit voltages and fill factors. These metrics are correlated with the concentration of QDAPs in the absorbers. One additional device with insufficient zinc showed the empirically observed low-efficiency expected for this composition. This sample also showed the highest quasi donor-acceptor pair density of all the devices measured.